SI4896DY

N-Channel 80-V (D-S) MOSFET Si4896DY Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 80 0.0165 at VGS = 10 V 0.022 at VGS = 6.0 V ID (A) 9.5 8.3 FEATURES Halogen-free According to IEC 61249-2-21 Definition TrenchFET® Power MOSFETs Compliant to RoHS Directive 2002/95/EC S1 S2 S3 G4 SO-8 8D 7D 6D 5D Top View Ordering Information: Si4896DY-T1-E3 (Lead (Pb)-free) Si4896DY-T1-GE3 (Lead (Pb)-free and Halogen-free) D G S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol 10 s Steady State Drain-Source Voltage VDS 80 Gate-Source Voltage VGS ± 20 Continuous Drain Current (TJ = 150 °C)a TA = 25 °C TA = 70 °C ID 9.5 6.7 7.6 5.4 Pulsed Drain Current IDM 50 Avalanche Current L = 0.1 mH IAS 40 Continuous Source Current (Diode Conduction)a IS 2.8 1.4 Maximum Power Dissipationa TA = 25 °C TA = 70 °C PD 3.1 1.56 2.0 1.0 Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 150 Unit V A W °C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta Maximum Junction-to-Foot (Drain) Notes: a. Surface Mounted on 1" x 1" FR4 board. t ≤ 10 s Steady State Steady State Symbol RthJA RthJF Typical 33 65 17 Maximum 40 80 21 Unit °C/W Document Number: 71300 S09-0870-Rev. C, 18-May-09 www.vishay.com 1 Si4896DY Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Static Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250 µA Gate-...