SI4840DY

N-Channel 40-V (D-S) MOSFET Si4840DY Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 40 0.009 at VGS = 10 V 0.012 at VGS = 4.5 V ID (A) 14 12 S1 S2 S3 G4 SO-8 8D 7D 6D 5D Top View Ordering Information: Si4840DY-T1-E3 (Lead (Pb)-free) Si4840DY-T1-GE3 (Lead (Pb)-free and Halogen-free) FEATURES Halogen-free According to IEC 61249-2-21 Definition TrenchFET® Power MOSFET 100 % Rg Tested Compliant to RoHS Directive 2002/95/EC D G S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol 10 s Steady State Drain-Source Voltage VDS 40 Gate-Source Voltage VGS ± 20 Continuous Drain Current (TJ = 150 °C)a TA = 25 °C TA = 70 °C ID 14 11 10 8 Pulsed Drain Current IDM 50 Avalanche Current Avalanche Energy (Single Pulse) L = 0.1 mH IAS EAS 30 45 Continuous Source Current (Diode Conduction)a IS 2.8 1.4 Maximum Power Dissipationa TA = 25 °C TA = 70 °C PD 3.1 1.56 2.0 1.0 Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 150 Unit V A mJ A W °C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta Maximum Junction-to-Foot (Drain) Notes: a. Surface Mounted on 1" x 1" FR4 board. t ≤ 10 s Steady State Steady State Symbol RthJA RthJF Typical 33 65 17 Maximum 40 80 21 Unit °C/W Document Number: 71188 S09-0869-Rev. E, 18-May-09 www.vishay.com 1 Si4840DY Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Static Gate Thr...