Si4831DY

Si4831DY New Product Vishay Siliconix P-Channel 30-V (D-S) MOSFET with Schottky Diode MOSFET PRODUCT SUMMARY VDS (V) –30 rDS(on) (W) 0.045 @ VGS = –10 V 0.090 @ VGS = –4.5 V ID (A) "5 "3.5 SCHOTTKY PRODUCT SUMMARY VKA (V) 30 Vf (V) Diode Forward Voltage 0.53 V @ 3 A IF (A) 3 S K SO-8 A A S G 1 2 3 4 Top View 8 7 6 5 K K D D G D P-Channel MOSFET A ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage (MOSFET) Reverse Voltage (Schottky) Gate-Source Voltage (MOSFET) Continuous Drain Current (TJ = 150_C) (MOSFET)a, b Pulsed Drain Current (MOSFET) Continuous Source Current (MOSFET Diode Conduction)a, b Average Foward Current (Schottky) Pulsed Foward Current (Schottky) Maximum Power Dissipation (MOSFET)a, b Maximum Power Dissipation (Schottky)a, b Operating Junction and Storage Temperature Range Notes a. Surface Mounted on FR4 Board. b. t v 10 sec. Document Number: 71061 S-61859—Rev. A, 10-Oct-99 www.vishay.com S FaxBack 408-970-5600 TA = 25_C TA = 70_C TA = 25_C TA = 70_C TJ, Tstg PD TA = 25_C TA = 70_C Symbol VDS VKA VGS ID IDM IS IF IFM Limit –30 30 "20 "5 "3.9 "20 –1.7 3 20 2 1.28 1.83 1.17 –55 to 150 Unit V A W _C 2-1 Si4831DY Vishay Siliconix THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambient (t v 10 sec)a New Product Device MOSFET Schottky MOSFET Schottky MOSFET Symbol Typical 52 56 Maximum 62.5 68 100 110 33 40 Unit RthJA Maximum Junction-to-Ambient (t = steady state)a 82 91 27 _C/W Maximum ...