Si4830ADY
Vishay Siliconix
Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
...
Si4830ADY
Vishay Siliconix
Dual N-Channel 30-V (D-S) MOSFET with
Schottky Diode
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
30 0.022 at VGS = 10 V 0.030 at VGS = 4.5 V
ID (A) 7.5 6.5
SCHOTTKY PRODUCT SUMMARY
VDS (V)
VSD (V) Diode Forward Voltage
30 0.50 at 1 A
IF (A) 2.0
FEATURES Halogen-free According to IEC 61249-2-21
Definition LITTLE FOOT® Plus
Schottky Si4830DY Pin Compatible PWM Optimized 100 % Rg Tested Compliant to RoHS Directive 2002/95/EC
APPLICATIONS Asymmetrical Buck-Boost DC/DC Converter
D1
S1/D2 G1 S2 G2
1 2 3 4
SO-8 Top View
8 D1 7 D1 6 S1/D2 5 S1/D2
Ordering Information: Si4830ADY-T1-E3 (Lead (Pb)-free) Si4830ADY-T1-GE3 (Lead (Pb)-free and Halogen-free)
G1
S1 N-Channel MOSFET
D2
Schottky Diode G2
S2 N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
10 s Steady State
Drain-Source Voltage
VDS 30
Gate-Source Voltage
VGS
± 20
Continuous Drain Current (TJ = 150 °C)a Pulsed Drain Current
TA = 25 °C TA = 70 °C
ID IDM
7.5 5.7 6.0 4.6
30
Continuous Source Current (Diode Conduction)a
IS 1.7 0.9
Maximum Power Dissipationa Operating Junction and Storage Temperature Range
TA = 25 °C TA = 70 °C
PD TJ, Tstg
2.0 1.1 1.3 0.7
- 55 to 150
THERMAL RESISTANCE RATINGS
Parameter Maximum Junction-to-Ambienta Maximum Junction-to-Foot (Drain)
t ≤ 10 s Steady State Steady State
Notes: a. Surface Mounted on 1" x 1" FR4 board.
Symbol RthJA RthJF
MOSFET
Typ.
Max.
52 62.5
93 110
35 40
SCHOTTK...