Si4818DY

Si4818DY Vishay Siliconix Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode PRODUCT SUMMARY VDS (V) Channel 1 Channel-1 30 Channel 2 Channel-2 rDS(on) (W) 0.022 @ VGS = 10 V 0.030 @ VGS = 4.5 V 0.0155 @ VGS = 10 V 0.0205 @ VGS = 4.5 V ID (A) 6.3 5.4 9.5 8.2 SCHOTTKY PRODUCT SUMMARY VDS (V) 30 VSD (V) Diode Forward Voltage 0.50 V @ 1.0 A IF (A) 2.0 D1 D2 D2 D2 SO-8 S1 G1 S2 G2 1 2 3 4 Top View Ordering Information: Si4818DY Si4818DY-T1 (with Tape and Reel) 8 7 6 5 D1 D2 D2 D2 S1 N-Channel 1 MOSFET S2 A Schottky Diode G1 G2 N-Channel 2 MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Channel-1 Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa TA = 25_C TA = 70_C TA = 25_C TA = 70_C Channel-2 10 secs 30 20 V 9.5 7.6 40 7.0 5.6 A 1.15 1.25 0.80 W _C Symbol VDS VGS 10 secs Steady State Steady State Unit 6.3 ID IDM IS PD TJ, Tstg 1.3 1.4 0.9 5.4 30 5.3 4.2 0.9 1.0 0.64 - 55 to 150 2.2 2.4 1.5 Operating Junction and Storage Temperature Range THERMAL RESISTANCE RATINGS Channel-1 Parameter t v 10 sec M i Maximum J Junction-to-Ambient ti t A bi ta Maximum Junction-to-Foot (Drain) Notes a. Surface Mounted on 1” x 1” FR4 Board. Document Number: 71122 S-31062—Rev. B, 26-May-03 www.vishay.com Steady-State Steady-State RthJA RthJC Channel-2 Typ 43 82 25 Schottky Typ 48 80 28 Symbol Typ 72 100 51 Max 90 125 63...