SI4807DY

Si4807DY Vishay Siliconix P-Channel 30:1 Ratio Dual-Gate 30-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) Gate 1 –30 30 Gate 2 rDS(ON) (W) 0.035 @ VGS = –10 V 0.054 @ VGS = –4.5 V 1.3 @ VGS = –10 V 2.2 @ VGS = –4.5 V ID (A) "6 "4.8 "0.9 "0.7 D SO-8 G2 G1 S S 1 2 3 4 Top View S P-Channel MOSFET 8 7 6 5 NC D D D G2 G1 ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C TA = 25_C TA = 70_C ID "4.8 IDM IS PD TJ, Tstg "30 –1.25 2.3 W 1.0 –55 to 150 _C "0.7 "1.5 A Symbol VDS VGS Gate 1 –30 "20 "6 Gate 2 Unit V "0.9 THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta Notes a. Surface Mounted on FR4 Board, t v 10 sec. Document Number: 70643 S-00652—Rev. E, 27-Mar-00 www.vishay.com S FaxBack 408-970-5600 Symbol RthJA Limit 55 Unit _C/W 2-1 Si4807DY Vishay Siliconix SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta VGS(th) IGSS IDSS ID(on) rDS1(on) DS1( ) a D i Source Drain Drain-Source S On-State On O State S Resistance R i Symbol Test Condition Min Typ Max Unit VDS = VGS, ID = –250 mA VDS = 0 V, VGS = "20 V VDS = –30 V, VGS = 0 V VDS = –30 V, VGS = 0 V, TJ = 55_C (G1 = G2) VDS = –5 V,...