SI4800

SI4800 N-channel TrenchMOS™ logic level FET M3D315 Rev. 02 — 17 February 2004 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ technology. 1.2 Features s Low gate charge s Low on-state resistance s Surface mounted package s Fast switching. 1.3 Applications s Portable appliances s Lithium-ion battery chargers s Notebook computers s DC-to-DC converters. 1.4 Quick reference data s VDS ≤ 30 V s Ptot ≤ 2.5 W s ID ≤ 9 A s RDSon ≤ 18.5 mΩ 2. Pinning information Table 1: Pin 1,2,3 4 5,6,7,8 Pinning - SOT96-1 (SO-8), simplified outline and symbol Description Simplified outline source (s) gate (g) 85 drain (d) 1 Top view 4 MBK187 SOT96-1 (SO8) Symbol d g MBB076 s Philips Semiconductors SI4800 N-channel TrenchMOS™ logic level FET 3. Ordering information Table 2: Ordering information Type number Package Name Description SI4800 SO8 plastic small outline package; 8 leads 4. Limiting values Table 3: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions VDS drain-source voltage (DC) VGS gate-source voltage (DC) ID drain current IDM peak drain current Ptot total power dissipation Tstg storage temperature Tj junction temperature Source-drain diode 25 °C ≤ Tj ≤ 150 °C Tamb = 25 °C; pulsed; tp ≤ 10 s; Figure 2 and 3 Tamb = 70 °C; pulsed; tp ≤ 10 s; Figure 2 Tamb = 25 °C; pulsed; tp ≤ 10 µs; Figure 3 Tamb = 25 °C; pul...