SI4562DY

Si4562DY Vishay Siliconix N- and P-Channel 2.5-V (G-S) MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) N-Channel 20 0.025 at VGS = 4.5 V 0.035 at VGS = 2.5 V P-Channel - 20 0.033 at VGS = - 4.5 V 0.050 at VGS = - 2.5 V ID (A) 7.1 6.0 - 6.2 - 5.0 FEATURES Halogen-free According to IEC 61249-2-21 Definition TrenchFET® Power MOSFET: 2.5 Rated Compliant to RoHS directive 2002/95/EC S1 1 G1 2 S2 3 G2 4 SO-8 8 D1 7 D1 6 D2 5 D2 Top View Ordering Information: Si4562DY-T1-E3 (Lead (Pb)-free) Si4562DY-T1-GE3 (Lead (Pb)-free and Halogen-free) D1 G1 S2 G2 S1 N-Channel MOSFET D2 P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol N-Channel P-Channel Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C)a Pulsed Drain Current Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25 °C TA = 70 °C TA = 25 °C TA = 70 °C VDS VGS ID IDM IS PD TJ, Tstg 20 - 20 ± 12 7.1 - 6.2 5.7 - 4.9 40 - 40 1.7 - 1.7 2.0 1.3 - 55 to 150 THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta Notes: a. Surface Mounted on FR4 board, t ≤ 10 s. Symbol RthJA N- or P-Channel 62.5 Unit V A W °C Unit °C/W Document Number: 70717 S09-0867-Rev. C, 18-May-09 www.vishay.com 1 Si4562DY Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Static Gate Threshold Voltage VGS(th) VDS = VGS,...