SI4511DY

Si4511DY Vishay Siliconix N- and P-Channel 20-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) N-Channel 20 0.0145 at VGS = 10 V 0.017 at VGS = 4.5 V P-Channel - 20 0.033 at VGS = - 4.5 V 0.050 at VGS = - 2.5 V ID (A) 9.6 8.6 - 6.2 -5 S1 1 G1 2 S2 3 G2 4 SO-8 8 D1 7 D1 6 D2 5 D2 Top View Ordering Information: Si4511DY-T1-E3 (Lead (Pb)-free) Si4511DY-T1-GE3 (Lead (Pb)-free and Halogen-free) FEATURES Halogen-free According to IEC 61249-2-21 Definition TrenchFET® Power MOSFET Compliant to RoHS directive 2002/95/EC APPLICATIONS Level Shift Load Switch D1 G1 S1 S2 G2 D2 ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted N-Channel P-Channel Parameter Symbol 10 s Steady State 10 s Steady State Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C)a, b Pulsed Drain Current TA = 25 °C TA = 70 °C Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa TA = 25 °C TA = 70 °C Operating Junction and Storage Temperature Range VDS VGS ID IDM IS PD TJ, Tstg 20 - 20 ± 16 ± 12 9.6 7.2 - 6.2 - 4.6 7.7 5.8 - 4.9 - 3.7 40 - 40 1.7 0.9 - 1.7 - 0.9 2 1.1 2 1.1 1.3 0.7 1.3 0.7 - 55 to 150 Unit V A W °C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta Maximum Junction-to-Foot (Drain) Notes: a. Surface Mounted on 1" x 1" FR4 board. b. t ≤ 10 s. t ≤ 10 s Steady State Steady State Symbol RthJA RthJF N-Channel Typ. Max. 50 62.5 85 110 30 40 P-Channel Typ. Max. 50...