SI4501DY

Si4501DY Vishay Siliconix Complementary MOSFET (N- and P-Channel) PRODUCT SUMMARY N-Channel VDS (V) 30 P-Channel -8 RDS(on) (Ω) 0.018 at VGS = 10 V 0.027 at VGS = 4.5 V 0.042 at VGS = - 4.5 V 0.060 at VGS = - 2.5 V ID (A) ±9 ± 7.4 ± 6.2 ± 5.2 S1 1 G1 2 S2 3 G2 4 SO-8 8D 7D 6D 5D Top View Ordering Information: Si4501DY-T1 Si4501DY-T1-E3 (Lead (Pb)-free) FEATURES Compliant to RoHS Directive 2002/95/EC S2 G2 D G1 S1 ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol N-Channel P-Channel Drain-Source Voltage VDS 30 -8 Gate-Source Voltage VGS ± 20 ±8 Continuous Drain Current (TJ = 150 °C)a, b TA = 25 °C TA = 70 °C ID ±9 ± 7.4 ± 6.2 ± 5.0 Pulsed Drain Current IDM ± 30 ± 20 Continuous Source Current (Diode Conduction)a, b IS 1.7 - 1.7 Maximum Power Dissipationa, b TA = 25 °C TA = 70 °C PD 2.5 1.6 Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 150 Unit V A W °C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta Maximum Junction-to-Foot Notes: a. Surface Mounted on FR4 board. b. t ≤ 10 s. t ≤ 10 s Steady State Steady State Symbol RthJA RthJC N-Channel Typ. Max. 38 50 73 95 17 22 P-Channel Typ. Max. 40 50 73 95 20 26 Unit °C/W * Pb containing terminations are not RoHS compliant, exemptions may apply. Document Number: 70934 S-09-0658-Rev. D, 20-Apr-09 www.vishay.com 1 Si4501DY Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol T...