Complementary MOSFET
Si4500BDY
Vishay Siliconix
Complementary MOSFET Half-Bridge (N- and P-Channel)
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
N...
Description
Si4500BDY
Vishay Siliconix
Complementary MOSFET Half-Bridge (N- and P-Channel)
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
N-Channel
20
0.020 at VGS = 4.5 V 0.030 at VGS = 2.5 V
P-Channel
- 20
0.060 at VGS = - 4.5 V 0.100 at VGS = - 2.5 V
ID (A) 9.1 7.5 - 5.3 - 4.1
FEATURES Halogen-free According to IEC 61249-2-21
Definition TrenchFET® Power MOSFET Compliant to RoHS Directive 2002/95/EC
S2
S1 1 G1 2 S2 3 G2 4
SO-8 Top View
8D 7D 6D 5D
G2 D
G1
Ordering Information: Si4500BDY-T1-E3 (Lead (Pb)-free) Si4500BDY-T1-GE3 (Lead (Pb)-free and Halogen-free)
S1
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
N-Channel
P-Channel
Parameter
Symbol
10 s Steady State 10 s Steady State
Drain-Source Voltage
VDS 20
- 20
Gate-Source Voltage
VGS
± 12
± 12
Continuous Drain Current (TJ = 150 °C)a,b
TA = 25 °C TA = 70 °C
ID
9.1 7.3
6.6
- 5.3
- 3.8
5.3
- 4.9
- 3.1
Pulsed Drain Current
IDM 30
- 20
Continuous Source Current (Diode Conduction)a,b
IS
2.1
1.1
- 2.1
- 1.1
Maximum Power Dissipationa,b
TA = 25 °C TA = 70 °C
PD
2.5 1.6
1.3 0.8
2.5 1.6
1.3 0.8
Operating Junction and Storage Temperature Range
TJ, Tstg
- 55 to 150
Unit V
A
W °C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambienta
Maximum Junction-to-Foot (Drain) Notes: a. Surface Mounted on FR4 board. b. t ≤ 10 s.
t ≤ 10 s Steady State Steady State
Symbol RthJA RthJF
N-Channel
Typ.
Max.
40 50
75 95
20 22
P-Channel
Typ.
Max.
41 50
75 95
23 26
Unit °C...
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