SI4473BDY

Si4473BDY New Product Vishay Siliconix P-Channel 14-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) −14 FEATURES ID (A) −13 −10 rDS(on) (W) 0.011 @ VGS = −4.5 V 0.018 @ VGS = −2.5 V D TrenchFETr Power MOSFET D 100% Rg Tested APPLICATION D Battery Switch for Portable Devices S SO-8 S S S G 1 2 3 4 Top View Ordering Information: Si4473BDY—E3 (lLead Free) Si4473BDY-T1—E3 (Lead Free with Tape and Reel) 8 7 6 5 D D D D G D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C TA = 25_C TA = 70_C Symbol VDS VGS ID IDM IS PD TJ, Tstg 10 secs Steady State −14 "12 Unit V −13 −9.9 −50 −2.3 2.5 1.6 −55 to 150 −9.8 −7.8 A −1.34 1.5 0.94 W _C THERMAL RESISTANCE RATINGS Parameter M i Maximum J Junction-to-Ambient ti t A bi ta Maximum Junction-to-Foot (Drain) Notes a. Surface Mounted on 1” x 1” FR4 Board. Document Number: 72691 S-32676—Rev. A, 29-Dec-03 www.vishay.com t v 10 sec Steady State Steady State Symbol RthJA RthJF Typical 40 70 15 Maximum 50 85 18 Unit _C/W 1 Si4473BDY Vishay Siliconix New Product SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain Source On-State Drain-Source O...