SI4403DY

Si4403DY New Product Vishay Siliconix P-Channel 1.8-V (G-S) MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) 0.017 @ VGS = –4.5 V –20 0.023 @ VGS = –2.5 V 0.032 @ VGS = –1.8 V FEATURES ID (A) –9 –7 –6 D TrenchFETr Power MOSFETS APPLICATIONS D Load Switch – Game Stations – Notebooks – Desktops S SO-8 S S S G 1 2 3 4 Top View D P-Channel MOSFET 8 7 6 5 D G D D D ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C PD TJ, Tstg TA = 25_C TA = 70_C ID –7 IDM IS –2.1 2.5 1.6 –55 to 150 –30 –1.3 1.35 0.87 W _C –5.0 A Symbol VDS VGS 10 secs Steady State –20 "8 Unit V –9 –6.5 THERMAL RESISTANCE RATINGS Parameter t v 10 sec Maximum Junction-to-Ambienta Maximum Junction-to-Foot (Drain) Notes a Surface Mounted on 1” x 1” FR4 Board. Document Number: 71683 S-04393—Rev. A, 13-Aug-01 www.vishay.com Steady State Steady State RthJA RthJF Symbol Typical 38 71 19 Maximum 50 92 25 Unit _C/W 1 Si4403DY Vishay Siliconix New Product SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta VGS(th) IGSS IDSS ID(on) VDS = VGS, ID = –250 mA VDS = 0 V, VGS = "8 V VDS = –16 V, VGS = 0 V VDS = –16 V, VGS = 0 V, TJ = 70_C VDS –5 V...