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SI3447BDV

Vishay Siliconix

P-Channel 12-V (D-S) MOSFET


Description
P-Channel 12-V (D-S) MOSFET Si3447BDV Vishay Siliconix PRODUCT SUMMARY VDS (V) - 12 RDS(on) (Ω) 0.040 at VGS = - 4.5 V 0.053 at VGS = - 2.5 V 0.072 at VGS = - 1.8 V ID (A) - 6.0 - 5.2 - 4.5 FEATURES Halogen-free According to IEC 61249-2-21 Definition TrenchFET® Power MOSFET: 1.8 V Rated Ultra Low On-Resistance Compliant to RoHS Directive 2002/9...



Vishay Siliconix

SI3447BDV

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