SI3430DV

Si3430DV Vishay Siliconix N-Channel 100-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) 100 FEATURES ID (A) 2.4 2.3 rDS(on) (W) 0.170 @ VGS = 10 V 0.185 @ VGS = 6.0 V D High-Efficiency PWM Optimized D 100% Rg Tested TSOP-6 Top View 1 3 mm 6 5 (3) G 3 4 (1, 2, 5, 6) D 2 2.85 mm (4) S Ordering Information: Si3430DV-T1 N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 175_C)a Pulsed Drain Current Avalanche Current Repetitive Avalanche Energy (Duty Cycle v1%) Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 85_C L = 0.1 0 1 mH TA = 25_C TA = 85_C Symbol VDS VGS ID IDM IAR EAR IS PD TJ, Tstg 5 secs 100 "20 2.4 1.7 8 6 1.8 1.7 2.0 1.0 Steady State Unit V 1.8 1.3 A mJ 1.0 1.14 0.59 A W _C - 55 to 150 THERMAL RESISTANCE RATINGS Parameter M i Maximum J Junction-to-Ambient ti t A bi ta Maximum Junction-to-Foot (Drain) Notes a. Surface Mounted on 1” x 1” FR4 Board. Document Number: 71235 S-31725—Rev. B, 18-Aug-03 www.vishay.com t v 5 sec Steady State Steady State Symbol RthJA RthJF Typical 45 90 25 Maximum 62.5 110 30 Unit _C/W 1 Si3430DV Vishay Siliconix SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-State Resistancea Forward Transconductancea Di...