P-Channel MOSFET
Si2305DS
Vishay Siliconix
P-Channel 1.25-W, 1.8-V (G-S) MOSFET
PRODUCT SUMMARY
VDS (V)
–8 8
rDS(on) (W)
0.052 @ VGS = ...
Description
Si2305DS
Vishay Siliconix
P-Channel 1.25-W, 1.8-V (G-S) MOSFET
PRODUCT SUMMARY
VDS (V)
–8 8
rDS(on) (W)
0.052 @ VGS = –4.5 V 0.071 @ VGS = –2.5 V 0.108 @ VGS = –1.8 V
ID (A)
"3.5 "3 "2
TO-236 (SOT-23)
G 1 3 S 2 D
Top View Si2305DS (A5)* *Marking Code
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C) Pulsed Drain Current Continuous Source Current (Diode Conduction)a, b Maximum Power Dissipation)a, b Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C TA = 25_C TA = 70_C
Symbol
VDS VGS ID IDM IS PD TJ, Tstg
Limit
–8 "8 "3.5 "2.8 "12 –1.6 1.25 0.8 –55 to 150
Unit
V
A
W _C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambienta t v 5 sec Steady State Notes a. Surface Mounted on FR4 Board. b. t v5 sec. Document Number: 70833 S-56947—Rev. C, 28-Dec-98 www.vishay.com S FaxBack 408-970-5600
Symbol
RthJA
Typical
Maximum
100
Unit
_C/W
130
2-1
Si2305DS
Vishay Siliconix
SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Limits Parameter Static
Drain-Source Breakdown Voltage Gate-Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current V(BR)DSS VGS(th) IGSS IDSS VGS = 0 V, ID = –10 mA VDS = VGS, ID = –250 mA VDS = 0 V, VGS = "8 V VDS = –6.4 V, VGS = 0 V VDS = –6.4 V, VGS = 0 V, TJ = 55_C VDS v –5 V, VGS = –4.5 V VDS v –5 V, VGS = –2.5 V VGS = –4.5 V, ID = –3.5 A
a D i S Drain-Source On-Resistance O R i
Symbol
Test Conditions
Min
Ty...
Similar Datasheet