SI2304DS

SI2304DS N-channel enhancement mode field-effect transistor Rev. 01 — 17 August 2001 M3D088 Product data 1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™1 technology Product availability: SI2304DS in SOT23. 2. Features s TrenchMOS™ technology s Very fast switching s Subminiature surface mount package. 3. Applications s Battery management s High speed switch s Low power DC to DC converter. 4. Pinning information Table 1: Pin 1 2 3 Pinning - SOT23, simplified outline and symbol Description gate (g) source (s) drain (d) g 1 Top view 2 MSB003 MBB076 Simplified outline 3 Symbol d s SOT23 1. TrenchMOS is a trademark of Koninklijke Philips Electronics N.V. Philips Semiconductors SI2304DS N-channel enhancement mode field-effect transistor 5. Quick reference data Table 2: VDS ID Ptot Tj RDSon Quick reference data Conditions Tj = 25 to 150 °C Tsp = 25 °C; VGS = 5 V Tsp = 25 °C VGS = 10 V; ID = 500 mA VGS = 4.5 V; ID = 500 mA Min − − − − − − Typ − − − − − − Max 30 1.7 0.83 150 117 190 Unit V A W °C mΩ mΩ drain-source voltage (DC) drain current (DC) total power dissipation junction temperature drain-source on-state resistance Symbol Parameter 6. Limiting values Table 3: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter VDS VDGR VGS ID IDM Ptot Tstg Tj IS ISM drain-source voltage (DC) drain-gate voltage (DC) gate-source voltage (DC) drain current (DC) peak drain current total...