P-Channel MOSFET
Si2301DS
Vishay Siliconix
P-Channel 1.25-W, 2.5-V MOSFET
PRODUCT SUMMARY
VDS (V)
- 20
rDS(on) (W)
0.130 @ VGS = - 4.5 ...
Description
Si2301DS
Vishay Siliconix
P-Channel 1.25-W, 2.5-V MOSFET
PRODUCT SUMMARY
VDS (V)
- 20
rDS(on) (W)
0.130 @ VGS = - 4.5 V 0.190 @ VGS = - 2.5 V
ID (A)
- 2.3 - 1.9
TO-236 (SOT-23)
G
1 3 D Ordering Information: Si2301DS-T1
S
2
Top View Si2301DS (A1)* *Marking Code
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)b Pulsed Drain Currenta Continuous Source Current (Diode Conduction)b Power Dissipationb Operating Junction and Storage Temperature Range TA= 25_C TA= 70_C TA= 25_C TA= 70_C
Symbol
VDS VGS ID IDM IS PD TJ, Tstg
Limit
- 20 "8 - 2.3 - 1.5 - 10 - 1.6 1.25 0.8 - 55 to 150
Unit
V
A
W _C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambientb Maximum Junction-to-Ambientc Notes a. Pulse width limited by maximum junction temperature. b. Surface Mounted on FR4 Board, t v 5 sec. c. Surface Mounted on FR4 Board. For SPICE model information via the Worldwide Web: http://www.vishay.com/www/product/spice.htm Document Number: 70627 S-31990—Rev. E, 13-Oct-03 www.vishay.com RthJA
Symbol
Limit
100 166
Unit
_C/W
1
Si2301DS
Vishay Siliconix
SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Limits Parameter Static
Drain-Source Breakdown Voltage Gate-Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current V(BR)DSS VGS(th) IGSS IDSS VGS = 0 V, ID = - 250 mA VDS = VGS, ID = - 250 mA VDS = 0 V, VGS = "8 V VDS = - 20 V, VGS = 0 V VDS = - 20 V, VGS = 0 V, TJ ...
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