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SI1912EDH

Vishay Siliconix

Dual N-Channel MOSFET


Description
Dual N-Channel 20 V (D-S) MOSFET Si1912EDH Vishay Siliconix PRODUCT SUMMARY VDS (V) 20 RDS(on) (Ω) 0.280 at VGS = 4.5 V 0.360 at VGS = 2.5 V 0.450 at VGS = 1.8 V ID (A) 1.28 1.13 1.0 SOT-363 SC-70 (6-LEADS) FEATURES Halogen-free According to IEC 61249-2-21 Definition TrenchFET® Power MOSFETs: 1.8 V Rated ESD Protected: 2000 V Thermally Enhance...



Vishay Siliconix

SI1912EDH

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