SI1555DL

Si1555DL Vishay Siliconix Complementary Low-Threshold MOSFET Pair PRODUCT SUMMARY VDS (V) RDS(on) () N-Channel 20 0.385 at VGS = 4.5 V 0.630 at VGS = 2.5 V 0.600 at VGS = - 4.5 V P-Channel -8 0.850 at VGS = - 2.5 V 1.200 at VGS = - 1.8 V ID (A) 0.70 0.54 - 0.60 - 0.50 - 0.42 FEATURES TrenchFET® Power MOSFET Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 SOT-363 SC-70 (6-LEADS) S1 1 G1 2 D2 3 6 D1 5 G2 4 S2 Top View Marking Code YY RB XX Lot Traceability and Date Code Part # Code Ordering Information: Si1555DL-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) N-Channel P-Channel Parameter Symbol 5 s Steady State 5 s Steady State Drain-Source Voltage VDS 20 -8 Gate-Source Voltage VGS ± 12 ±8 Continuous Drain Current (TJ = 150 °C)a TA = 25 °C TA = 85 °C ID ± 0.70 ± 0.50 ± 0.66 ± 0.48 - 0.60 - 0.43 - 0.57 - 0.41 Pulsed Drain Current IDM ± 1 Continuous Source Current (Diode Conduction)a IS 0.25 0.23 - 0.25 - 0.23 Maximum Power Dissipationa TA = 25 °C TA = 85 °C PD 0.30 0.16 0.27 0.14 0.30 0.16 0.27 0.14 Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 150 Unit V A W °C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta t5s Steady State Maximum Junction-to-Foot (Drain) Steady State Note: a. Surface mounted on 1" x 1" FR4 board. Symbol RthJA RthJF Typical 360 400 300 Maximum 415 ...