SI1417EDH

P-Channel 12 V (D-S) MOSFET Si1417EDH Vishay Siliconix PRODUCT SUMMARY VDS (V) - 12 RDS(on) (Ω) 0.085 at VGS = - 4.5 V 0.115 at VGS = - 2.5 V 0.160 at VGS = - 1.8 V ID (A) - 3.3 - 2.9 - 2.4 SOT-363 SC-70 (6-LEADS) FEATURES Halogen-free According to IEC 61249-2-21 Definition TrenchFET® Power MOSFET: 1.8 V Rated ESD Protected: 3000 V Thermally Enhanced SC-70 Package Compliant to RoHS Directive 2002/95/EC APPLICATIONS Load Switching PA Switch Level Switch D D1 6D D2 5D G3 4S Top View Marking Code YY BB XX Lot Traceability and Date Code Part # Code Ordering Information: Si1417EDH-T1-E3 (Lead (Pb)-free) Si1417EDH-T1-GE3 (Lead (Pb)-free and Halogen-free) 3k G S ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol 5s Steady State Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C)a Pulsed Drain Current Continuous Diode Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25 °C TA = 85 °C TA = 25 °C TA = 85 °C VDS VGS ID IDM IS PD TJ, Tstg - 12 ± 12 - 3.3 - 2.7 - 2.4 - 1.9 -8 - 1.4 - 0.9 1.56 1.0 0.81 0.52 - 55 to 150 Unit V A W °C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta Maximum Junction-to-Foot (Drain) Notes: a. Surface mounted on 1" x 1" FR4 board. t≤5s Steady State Steady State Symbol RthJA RthJF Typical 60 100 34 Maximum 80 125 45 Unit °C/W Document Number: 71412 S10-0935-Rev. B, 19...