SI1404DH

N-Channel 25-V (D-S) MOSFET Si1404DH Vishay Siliconix PRODUCT SUMMARY VDS (V) rDS(on) (W) 0.35 @ VGS = 4.5 V 25 0.45 @ VGS = 2.5 V ID (A) 1.57 1.39 Qg (Typ) 1.3 FEATURES D Thermally Enhanced SC-70 Package APPLICATIONS D Load Switch for Portable Devices SOT-363 SC-70 (6-LEADS) D1 6D D2 5D G3 4S Top View Ordering Information: Si1404DH-T1 Si1404DH-T1—E3 (Lead (Pb)-Free) Marking Code AD X YY Lot Traceability and Date Code Part # Code ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol 5 secs Steady State Drain-Source Voltage Gate-Source Voltage VDS VGS 25 "8 Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current Continuous Diode Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 85_C TA = 25_C TA = 85_C ID IDM IS PD TJ, Tstg 1.57 1.30 1.13 0.93 4 1.23 0.83 1.47 1.0 0.76 0.52 −55 to 150 Unit V A W _C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta Maximum Junction-to-Foot (Drain) Notes a. Surface Mounted on 1” x 1” FR4 Board. Document Number: 72318 S-41775—Rev. B, 04-Oct-04 t v 5 sec Steady State Steady State Symbol RthJA RthJF Typical 70 100 44 Maximum 85 125 55 Unit _C/W www.vishay.com 1 Si1404DH Vishay Siliconix SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Test Condition Min Typ Max Unit Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Curr...