SGW10N60A

SGP10N60A, SGB10N60A SGW10N60A Fast IGBT in NPT-technology 75% lower Eoff compared to previous generation combined with low conduction losses Short circuit withstand time – 10 µs Designed for: - Motor controls - Inverter NPT-Technology for 600V applications offers: - very tight parameter distribution - high ruggedness, temperature stable behaviour - parallel switching capability C G E P-TO-220-3-1 (TO-220AB) P-TO-263-3-2 (D²-PAK) P-TO-247-3-1 (TO-263AB) (TO-247AC) Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/ Type SGP10N60A SGB10N60A SGW10N60A Maximum Ratings Parameter Collector-emitter voltage DC collector current TC = 25°C TC = 100°C Pulsed collector current, tp limited by Tjmax Turn off safe operating area VCE ≤ 600V, Tj ≤ 150°C Gate-emitter voltage Avalanche energy, single pulse IC = 10 A, VCC = 50 V, RGE = 25 Ω , start at Tj = 25°C Short circuit withstand time Power dissipation TC = 25°C Operating junction and storage temperature Tj , Tstg -55...+150 °C 1) VCE 600V IC 10A VCE(sat) 2.3V Tj 150°C Package TO-220AB TO-263AB TO-247AC Ordering Code Q67040-S4457 Q67040-S4507 Q67040-S4510 Symbol VCE IC Value 600 20 10.6 Unit V A ICpul s VGE EAS 40 40 ±20 70 V mJ tSC Ptot 10 92 µs W VGE = 15V, VCC ≤ 600V, Tj ≤ 150°C 1) Allowed number of short circuits: <1000; time between short circuits: >1s. 1 Jul-02 SGP10N60A, SGB10N60A SGW10N60A Thermal Resistance Parameter Characteristic IGBT thermal resistance, junction – case Th...