SGM2016AP

SGM2016AM/AP GaAs N-channel Dual-Gate MES FET For the availability of this product, please contact the sales office. Description The SGM2016AM/AP is an N-channel dual-gate GaAs MES FET for UHF-band low-noise amplification. This FET is suitable for a wide range of applications including UHF TV tuners, cellular/cordless phone, and DBS IF amplifiers. Features Low voltage operation Low noise NF = 1.2dB (typ.) at 900MHz High gain Ga = 21dB (typ.) at 900MHz High stability Built-in gate protection diode Application UHF-band high-frequency amplifier, mixer, and oscillator Structure GaAs, N-channel, dual-gate metal semiconductor field-effect transistor Absolute Maximum Ratings (Ta = 25°C) Drain to source voltage VDSX 12 Gate 1 to source voltage VG1S –5 Gate 2 to source voltage VG2S –5 Drain current ID 55 Allowable power dissipation PD 150 Channel temperature Tch 150 Storage temperature Tstg –55 to +150 SGM2016AM SGM2016AP V V V mA mW °C °C Sony reserves the right to change products and specifications without prior notice. This information does not convey any license by any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating the operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits. –1– E96Y10-PS SGM2016AM/AP Electrical Characteristics Item Drain cut-off current Symbol IDSX Conditions VDS = 12V VG1S = –4V VG2S = 0V VG...