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SGM2016AN

Part Number	SGM2016AN
Manufacturer	Sony Corporation
Description	GaAs N-channel Dual-Gate MES FET
Features	• Ultra-small package • Low voltage operation • Low noise NF = 1.2dB (typ.) at 900MHz • High gain Ga = 21dB (typ.) at 90...
Published	Apr 8, 2005
Datasheet	SGM2016AN PDF File

Features

• Ultra-small package
• Low voltage operation
• Low noise NF = 1.2dB (typ.) at 900MHz
• High gain Ga = 21dB (typ.) at 900MHz
• High stability
• Built-in gate protection diode Application UHF-band high-frequency amplifier, mixer, and oscillator Struct...

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SGM2016P GaAs N-channel Dual-Gate MES FET - Sony Corporation

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