SGM2014AN

SGM2014AN GaAs N-channel Dual Gate MES FET For the availability of this product, please contact the sales office. Description The SGM2014AN is an N-channel dual gate GaAs MES FET for UHF band low-noise amplification. This FET is suitable for a wide range of applications including TV tuners, cellular radios, and DBS IF amplifiers. Features Ultra small package Low voltage operation Low noise: NF = 1.5dB (typ.) at 900MHz High gain: Ga = 18dB (typ.) at 900MHz Low cross-modulation High stability Built-in gate-protection diode Application UHF band amplifier, mixer and oscillator Structure GaAs N-channel dual-gate metal semiconductor field-effect transistor Absolute Maximum Ratings (Ta = 25°C) Drain to source voltage VDSX 12 Gate 1 to source voltage VG1S –5 Gate 2 to source voltage VG2S –5 Drain current ID 55 Allowable power dissipation PD 100 Channel temperature Tch 125 Storage temperature Tstg –55 to +150 M-281 V V V mA mW °C °C Sony reserves the right to change products and specifications without prior notice. This information does not convey any license by any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating the operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits. –1– E97938-PS SGM2014AN Electrical Characteristics Item Drain cut-off current Symbol IDSX Condition Min. Typ. VDS = 12V VG1S = –4V VG2S = 0V...