SGD-100T

Ordering number :EN3170A SGD-100T GaAs Schottky Barrier Diode C to X Band, Mixer, Modulator Applications Features · Very small-sized ceramic package. · Less parasitc components, conversion loss. Package Dimensions unit:mm 1235A [SGD-100T] 1:Cathode 2:Anode 3:Common SANYO:CP Specifications Absolute Maximum Ratings at Ta = 25˚C (Per element) Parameter Peak Reverse Voltage Reverse Voltage Peak Forward Current Average Rectified Current Junction Temperature Storage Temperature Mounting Temperature Symbol VRM VR IFM IO Tj Tstg Tm 10ns Conditions Ratings 4.5 4 150 50 150 –55 to +150 230 Unit V V mA mA ˚C ˚C ˚C Electrical Characteristics at Ta = 25˚C (Per element) Parameter Forward Voltage Reverse Voltage Interterminal Capacitance Series Resistance Symbol VF VR Ct RS IF=20mA IR=10µA V=0V, f=1MHz IF=20mA 4.0 Conditions Ratings min typ 0.8 6.0 0.3 1.5 0.4 3.0 max 0.9 Unit V V pF Ω Electrical Connection 1:Cathode 2:Anode 3:Common (Top view) SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquarters TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 41098HA (KT)/90694MO/8-6953/O259MO, TS No.3170-1/2 SGD-100T No products described or contained herein are intended for use in surgical implants, life-support systems, aerospace equipment, nuclear power control systems, vehicles, disaster/crime-prevention equipment and the like, the failure of which may directly or indirectly cause injury, death or property loss. Anyone purchasing any products described ...