SGB07N120

SGP07N120 SGB07N120 Fast IGBT in NPT-technology 40lower Eoff compared to previous generation Short circuit withstand time – 10 µs Designed for: - Motor controls - Inverter - SMPS NPT-Technology offers: - very tight parameter distribution - high ruggedness, temperature stable behaviour - parallel switching capability C G E P-TO-220-3-1 (TO-220AB) P-TO-263-3-2 (D²-PAK) (TO-263AB) Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/ Type SGP07N120 SGB07N120 Maximum Ratings Parameter Collector-emitter voltage DC collector current TC = 25°C TC = 100°C Pulsed collector current, tp limited by Tjmax Turn off safe operating area VCE ≤ 1200V, Tj ≤ 150°C Gate-emitter voltage Avalanche energy, single pulse IC = 8A, VCC = 50V, RGE = 25Ω, start at Tj = 25°C Short circuit withstand time Power dissipation TC = 25°C Operating junction and storage temperature Soldering temperature, 1.6mm (0.063 in.) from case for 10s Tj , Tstg -55...+150 260 °C 1) VCE 1200V IC 8A Eoff 0.7mJ Tj 150°C Package TO-220AB TO-263AB(D2PAK) Ordering Code Q67040-S4272 Q67040-S4273 Symbol VCE IC Value 1200 16.5 7.9 Unit V A ICpul s VGE EAS tSC Ptot 27 27 ±20 40 10 125 V mJ µs W VGE = 15V, 100V ≤ VCC ≤ 1200V, Tj ≤ 150°C 1) Allowed number of short circuits: <1000; time between short circuits: >1s. 1 Jul-02 Power Semiconductors SGP07N120 SGB07N120 Thermal Resistance Parameter Characteristic IGBT thermal resistance, junction – case Thermal resistance, junction – ambient S...