SIDC24D30SIC3

SIDC24D30SIC3 Silicon Carbide Schottky Diode FEATURES: Revolutionary semiconductor material Silicon Carbide Switching behavior benchmark No reverse recovery No temperature influence on the switching behavior No forward recovery Applications: SMPS, snubber, secondary side rectification A C Chip Type SIDC24D30SIC3 VBR 300V IF 10A Die Size 1.706 x 1.38 mm2 Package sawn on foil Ordering Code Q67050-A4163A103 MECHANICAL PARAMETER: Raster size Anode pad size Area total / active Thickness Wafer size Flat position Max. possible chips per wafer Passivation frontside Anode metalization Cathode metalization Die bond Wire bond Reject Ink Dot Size Recommended Storage Environment 1.706x 1.38 mm 1.405 x 1.08 2.354 / 1.548 355 75 0 1649 pcs Photoimide 3200 nm Al 1400 nm Ni Ag –system suitable for epoxy and soft solder die bonding Electrically conductive glue or solder Al, ≤ 350µm ∅ ≥ 0.3 mm store in original container, in dry nitrogen, < 6 month at an ambient temperature of 23°C mm µm mm deg 2 Edited by INFINEON Technologies, AI PS DD HV3, Edition 1, 22.04.2004 SIDC24D30SIC3 Maximum Ratings Parameter Repetitive peak reverse voltage Surge peak reverse voltage Continuous forward current limited by Tjmax Single pulse forward current (depending on wire bond configuration) Symbol VRRM V RSM IF I FSM I FRM I FMAX Tj , Ts t g Condition Value 300 300 10 Unit V TC =25° C, tP =10 ms sinusoidal TC = 100 ° C, T j = 1 5 0 ° C, D=0.1 TC =25° C, tp=10µs 36 45 100 -55...+175 A ...