Si9925DY
N-channel enhancement mode field-effect transistor
M3D315
Rev. 01 — 20 July 2001
Product data
1. Description
...
Si9925DY
N-channel enhancement mode field-effect
transistor
M3D315
Rev. 01 — 20 July 2001
Product data
1. Description
Dual N-channel enhancement mode field-effect
transistor in a plastic package using TrenchMOS™1 technology. Product availability: Si9925DY in SOT96-1 (SO8).
2. Features
s Low on-state resistance s Fast switching s TrenchMOS™ technology.
3. Applications
s s s s s DC to DC convertors DC motor control Lithium-ion battery applications Notebook PC Portable equipment applications.
c c
4. Pinning information
Table 1: Pin 1 2 3 4 5,6 7,8 Pinning - SOT96-1, simplified outline and symbol Description source 1 (s1)
8 7 6 5 d1 d2
Simplified outline
Symbol
gate 1 (g1) source 2 (s2) gate 2 (g2) drain 2 (d2) drain 1 (d1)
pin 1 index
03ab52
1
2
3
4
03ab58
g1
s1
g2
s2
SOT96-1 (SO8)
1.
TrenchMOS is a trademark of Royal Philips Electronics.
Philips Semiconductors
Si9925DY
N-channel enhancement mode field-effect
transistor
5. Quick reference data
Table 2: VDS ID Ptot Tj RDSon Quick reference data Conditions Tj = 25 to 150 °C Tamb = 25 °C; pulsed; tp ≤ 10 s Tamb = 25 °C; pulsed; tp ≤ 10 s VGS = 7.2 V; ID = 5 A VGS = 4.5 V; ID = 5 A VGS = 3 V; ID = 3.9 A VGS = 2.5 V; ID = 1 A Typ − − − − 38 41 50 62 Max 20 5 2 150 45 50 60 80 Unit V A W °C mΩ mΩ mΩ mΩ drain-source voltage (DC) drain current (DC) total power dissipation junction temperature drain-source on-state resistance Symbol Parameter
6. Limiting values
Table 3: Limiting values In accordance with the Absolute...
