SI9910

Si9910 Vishay Siliconix Adaptive Power MOSFET Driver1 FEATURES D dv/dt and di/dt Control D Undervoltage Protection D Short-Circuit Protection D trr Shoot-Through Current Limiting D Low Quiescent Current D CMOS Compatible Inputs D Compatible with Wide Range of MOSFET Devices D Bootstrap and Charge Pump Compatible (High-Side Drive) DESCRIPTION The Si9910 Power MOSFET driver provides optimized gate drive signals, protection circuitry and logic level interface. Very low quiescent current is provided by a CMOS buffer and a high-current emitter-follower output stage. This efficiency allows operation in high-voltage bridge applications with “bootstrap” or “charge-pump” floating power supply techniques. The non-inverting output configuration minimizes current drain for an n-channel “on” state. The logic input is internally diode clamped to allow simple pull-down in high-side drives. Fault protection circuitry senses an undervoltage or output short-circuit condition and disables the power MOSFET. Addition of one external resistor limits maximum di/dt of the external Power MOSFET. A fast feedback circuit may be used to limit shoot-through current during trr (diode reverse recovery time) in a bridge configuration. The Si9910 is available in 8-pin plastic DIP and SOIC packages, and are specified over the industrial, D suffix (−40 to 85_C) temperature range. In SOIC-8 packaging both standard and lead (Pb)-free options are available. FUNCTIONAL BLOCK DIAGRAM VDS VDD DRAIN Undervoltage/...