Dual N-Channel Reduced Qg/ Fast Switching MOSFET
Si9802DY
Vishay Siliconix
Dual N-Channel Reduced Qg, Fast Switching MOSFET
PRODUCT SUMMARY
VDS (V)
20
rDS(on) (W)
0.0...
Description
Si9802DY
Vishay Siliconix
Dual N-Channel Reduced Qg, Fast Switching MOSFET
PRODUCT SUMMARY
VDS (V)
20
rDS(on) (W)
0.055 @ VGS = 4.5 V 0.075 @ VGS = 3.0 V
ID (A)
"4.5 "3.8
D1
D1
D2
D2
SO-8
S1 G1 S2 G2 1 2 3 4 Top View S1 N-Channel MOSFET S2 N-Channel MOSFET 8 7 6 5 D1 D1 D2 D2 G1 G2
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current (10 ms Pulse Width) Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C TA = 25_C TA = 70_C
Symbol
VDS VGS ID IDM IS PD TJ, Tstg
Limit
20 "12 "4.5 "3.6 "25 "1.7 2
Unit
V
A
W 1.3 –55 to 150 _C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambienta Notes a. Surface Mounted on FR4 Board, t v 10 sec. Document Number: 70625 S-51303—Rev. A, 19-Dec-96 www.vishay.com S FaxBack 408-970-5600
Symbol
RthJA
Limit
62.5
Unit
_C/W
1
Si9802DY
Vishay Siliconix
SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Parameter Static
Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain Source On-State Drain-Source On State Resistancea Forward Transconductancea Diode Forward Voltagea VGS(th) IGSS IDSS ID(on) rDS(on) DS( ) gfs VSD VDS = VGS, ID = 250 mA VDS = 0 V, VGS = "12 V VDS = 20 V, VGS = 0 V VDS = 20 V, VGS = 0 V, TJ = 70_C VDS w 5 V, VGS = 5 V VGS = 4.5 V, ID = 4.5 A VGS = 3.0 V, I...
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