SI9801DY

Si9801DY Vishay Siliconix N-/P-Channel, Reduced Qg, Fast Switching Half-Bridge PRODUCT SUMMARY VDS (V) N-Channel 20 rDS(on) (W) 0.055 @ VGS = 4.5 V 0.075 @ VGS = 3.0 V ID (A) "4.5 "3.8 "4.0 "3.0 P-Channel –20 0.080 @ VGS = –4.5 V 0.120 @ VGS = –3.0 V S2 SO-8 S1 G1 S2 G2 1 2 3 4 Top View S1 8 7 6 5 D D D D G1 D G2 ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C TA = 25_C TA = 70_C ID IDM IS PD TJ, Tstg 1.7 2.0 W 1.3 –55 to 150 _C Symbol VDS VGS N-Channel 20 "14 "4.5 "3.6 "20 P-Channel –20 Unit V "4.0 "3.0 A –1.7 THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta Notes a. Surface Mounted on FR4 Board, t v 10 sec. Document Number: 70712 S-61825—Rev. C, 16-Aug-99 www.vishay.com S FaxBack 408-970-5600 Symbol RthJA N- or P-Channel 62.5 Unit _C/W 5-1 Si9801DY Vishay Siliconix SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250 mA VDS = VGS, ID = –250 mA VDS = 0 V, VGS = "12 V VDS = 20 V, VGS = 0 V Z G V l D i Current C Zero Gate Voltage Drain IDSS VDS = –20 V, VGS = 0 V VDS = 20 V, VGS = 0 V, TJ = 70_C VDS = –20 V, VGS = 0 V, TJ = 70_C On-State Drain Currenta ID(on) VDS = 5 V, VGS = 4.5 V VDS = –5 V, VGS = –4.5 V VGS = 4...