P-Channel 30-V (D-S) MOSFET
Si9435BDY
New Product
Vishay Siliconix
P-Channel 30-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V) rDS(on) (W)
0.042 @ VGS = −...
Description
Si9435BDY
New Product
Vishay Siliconix
P-Channel 30-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V) rDS(on) (W)
0.042 @ VGS = −10 V −30 0.055 @ VGS = −6 V 0.070 @ VGS = −4.5 V
FEATURES
ID (A)
−5.7 −5.0 −4.4
D TrenchFETr Power MOSFET
S
SO-8
S S S G 1 2 3 4 Top View Ordering Information: Si9435BDY Si9435BDY-T1 (with Tape and Reel) 8 7 6 5 D D D D G
D P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C TA = 25_C TA = 70_C
Symbol
VDS VGS ID IDM IS PD TJ, Tstg
10 secs
Steady State
−30 "20
Unit
V
−5.7 −4.6 −30 −2.3 2.5 1.6 −55 to 150
−4.1 −3.2 A
−1.1 1.3 0.8 W _C
THERMAL RESISTANCE RATINGS
Parameter
M i Maximum J Junction-to-Ambient ti t A bi ta Maximum Junction-to-Foot (Drain) Notes a. Surface Mounted on 1” x 1” FR4 Board. t v 10 sec Steady State Steady State
Symbol
RthJA RthJF
Typical
40 70 24
Maximum
50 95 30
Unit
_C/W
Document Number: 72245 S-32274—Rev. B, 03-Nov-03
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Si9435BDY
Vishay Siliconix
New Product
SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Parameter Static
Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current VGS(th) IGSS IDSS ID(on) D( ) VDS = VGS, ID = −250 mA VDS = 0 V, VGS = "20 V VDS = −30 V, VGS = 0 V VDS = −30 V, VGS = 0 V, TJ = 70_...
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