SI8405DB

12 V P-Channel 1.8 V (G-S) MOSFET Si8405DB Vishay Siliconix PRODUCT SUMMARY VDS (V) - 12 RDS(on) () 0.055 at VGS = - 4.5 V 0.070 at VGS = - 2.5 V 0.090 at VGS = - 1.8 V ID (A) - 4.9 - 4.4 -4 MICRO FOOT Bump Side View Backside View 3 D 2 D 8405 xxx S 4 G 1 Device Marking: 8405 xxx = Date/Lot Traceability Code Ordering Information: Si8405DB-T1-E1 (Lead (Pb)-free and Halogen-free) FEATURES TrenchFET® Power MOSFET MICRO FOOT® Chipscale Packaging Reduces Footprint Area Profile (0.62 mm) and On-Resistance Per Footprint Area Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS PA, Battery and Load Switch S Battery Charger Switch G D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Symbol 5s Steady State Unit Drain-Source Voltage Gate-Source Voltage VDS - 12 V VGS ±8 Continuous Drain Current (TJ = 150 °C)a Pulsed Drain Current TA = 25 °C TA = 70 °C ID - 4.9 - 3.9 - 3.6 - 2.8 A IDM - 10 Continuous Source Current (Diode Conduction)a IS - 2.5 - 1.3 Maximum Power Dissipationa TA = 25 °C TA = 70 °C PD 2.77 1.47 1.77 0.94 W Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 150 °C Package Reflow Conditionsb IR/Convection 260 THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maximum Maximum Junction-to-Ambienta t5s Steady State RthJA 35 72 45 85 Maximum Junction-to-Foot (drain) Steady State RthJF 16 ...