SI7880DP

Si7880DP Vishay Siliconix N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) 0.003 @ VGS = 10 V 0.00425 @ VGS = 4.5 V ID (A) 29 25 D TrenchFETr Power MOSFET D PWM Optimized D New Low Thermal Resistance PowerPAKt Package with Low 1.07-mm Profile APPLICATIONS D DC/DC Converters - Low-Side MOSFET in Synchronous Buck in Desktops D Secondary Synchronous Rectifier PowerPAKt SO-8 D 6.15 mm S 1 2 3 4 D 8 7 6 5 D D D S S G 5.15 mm G S N-Channel MOSFET Bottom View ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current (10 ms Pulse Width) Avalanche Current Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C L = 0.1 mH TA = 25_C TA = 70_C Symbol VDS VGS 10 secs 30 "20 29 Steady State Unit V 18 14 60 50 A ID IDM IAS IS PD TJ, Tstg 25 4.5 5.4 3.4 -55 to 150 1.6 1.9 1.2 W _C THERMAL RESISTANCE RATINGS Parameter Maximum Junction Junction-to-Ambient to Ambienta Maximum Junction-to-Case (Drain) Notes a. Surface Mounted on 1” x 1” FR4 Board. Document Number: 71875 S-03768—Rev. B, 21-Apr-03 www.vishay.com t v 10 sec Steady State Steady State RthJA RthJC Symbol Typical 18 50 1.0 Maximum 23 65 1.5 Unit _C/W 1 Si7880DP Vishay Siliconix SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Gate Threshold Voltage Gate-Body Leakage Ze...