Si7705DN
New Product
Vishay Siliconix
Single P-Channel 20-V (D-S) MOSFET With Schottky Diode
MOSFET PRODUCT SUMMARY
VD...
Si7705DN
New Product
Vishay Siliconix
Single P-Channel 20-V (D-S) MOSFET With
Schottky Diode
MOSFET PRODUCT SUMMARY
VDS (V)
-20
FEATURES
ID (A)
- 6.3 - 5.3 - 4.6
rDS(on) (W)
0.048 @ VGS = -4.5 V 0.068 @ VGS = -2.5 V 0.090 @ VGS = -1.8 V
D TrenchFETr Power MOSFETS: 1.8-V Rated D Ultra-Low Thermal Resistance, PowerPAKt Package with Low 1.07-mm Profile
APPLICATIONS
D Charger Switching
SCHOTTKY PRODUCT SUMMARY
VKA (V)
20
Vf (V) Diode Forward Voltage
0.48 V @ 0.5 A
IF (A)
1.0
PowerPAKt 1212-8
S
K
3.30 mm
A
1 2
3.30 mm
A S
G
G
3 4
K
8 7
K D
6 5
D
D Bottom View P-Channel MOSFET
A
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage (MOSFET and
Schottky) Reverse Voltage (
Schottky) Gate-Source Voltage (MOSFET) Continuous Drain Current (TJ = 150_C) (MOSFET)a Pulsed Drain Current (MOSFET) Continuous Source Current (MOSFET Diode Conduction)a Average Foward Current (
Schottky) Pulsed Foward Current (
Schottky) Maximum Power Dissipation (MOSFET)a Maximum Power Dissipation (
Schottky)a Operating Junction and Storage Temperature Range Notes a. Surface Mounted on 1” x1” FR4 Board. Document Number: 71607 S-22520—Rev. B, 27-Jan-03 www.vishay.com TA = 25_C TA = 85_C TA = 25_C TA = 85_C TJ, Tstg PD TA = 25_C TA = 85_C
Symbol
VDS VKA VGS ID IDM IS IF IFM
10 sec
-20 20 "8 - 6.3 -4.5 -20 -2.3 1.0 7 2.8 1.5 2.0 1.0
Steady State
Unit
V
-4.3 -3.1 A -1.1
1.3 0.7 1.1 0.6 -55 to 150 _C W
1
Si7705DN
Vishay Siliconix
THERMAL RESISTANCE RATI...