SI7703EDN

Si7703EDN New Product Vishay Siliconix Single P-Channel 20-V (D-S) MOSFET With Schottky Diode MOSFET PRODUCT SUMMARY VDS (V) –20 FEATURES ID (A) –6.3 –5.3 –4.6 rDS(on) (W) 0.048 @ VGS = –4.5 V 0.068 @ VGS = –2.5 V 0.090 @ VGS = –1.8 V D TrenchFETr Power MOSFETS: 1.8-V Rated D ESD Protected: 4500 V D Ultra-Low Thermal Resistance, PowerPAKt Package with Low 1.07-mm Profile APPLICATIONS D Charger Switching SCHOTTKY PRODUCT SUMMARY VKA (V) 20 Vf (V) Diode Forward Voltage 0.48 V @ 0.5 A IF (A) 1.0 PowerPAKt 1212-8 S K 3.30 mm A 1 2 3.30 mm A S 3 4 K G G K 8 7 3 kW D 6 5 D D P-Channel MOSFET A Bottom View ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage (MOSFET and Schottky) Reverse Voltage (Schottky) Gate-Source Voltage (MOSFET) Continuous Drain Current (TJ = 150_C) (MOSFET)a Pulsed Drain Current (MOSFET) Continuous Source Current (MOSFET Diode Conduction)a Average Foward Current (Schottky) Pulsed Foward Current (Schottky) Maximum Power Dissipation (MOSFET)a Maximum Power Dissipation (Schottky)a Operating Junction and Storage Temperature Range Notes a. Surface Mounted on 1” x1” FR4 Board. Document Number: 71429 S-03709—Rev. A, 14-May-01 www.vishay.com TA = 25_C TA = 85_C TA = 25_C TA = 85_C TJ, Tstg PD TA = 25_C TA = 85_C Symbol VDS VKA VGS ID IDM IS IF IFM 10 sec –20 20 "12 –6.3 –4.5 –20 –2.3 1.0 7 2.8 1.5 2.0 1.0 Steady State Unit V "12 –4.3 –3.1 A –1.1 1.3 0.7 1.1 0.6 –55 to 150 _C W 1 Si7703EDN Vishay...