Si7501DN

Si7501DN Vishay Siliconix Complementary 30-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) P-Channel −30 FEATURES rDS(on) (W) 0.051 @ VGS = −10 V 0.075 @ VGS = −6 V 0.035 @ VGS = 10 V 0.050 @ VGS = 4.5 V ID (A) −6.4 −5.3 7.7 6.5 D TrenchFETr Power MOSFET D New Low Thermal Resistance PowerPAKr Package with Low 1.07-mm Profile APPLICATIONS D Backlight Inverter D DC/DC Converter − 4-Cell Battery N Channel N-Channel 30 PowerPAK 1212-8 S1 3.30 mm S1 1 2 G1 3 3.30 mm S2 4 G2 G1 D D 8 7 D 6 D 5 D G2 Bottom View Ordering Information: Si7501DN-T1—E3 S2 ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) P-Channel Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa TA = 25_C TA = 70_C TA = 25_C TA = 70_C N-Channel 10 secs Steady State 30 "20 Symbol VDS VGS ID IDM IS PD TJ, Tstg 10 secs Steady State −30 "25 Unit V −6.4 −5.1 −25 −2.6 3.1 3 −4.5 −3.6 7.7 4.7 25 5.4 4.3 A −1.3 1.6 1.0 −55 to 150 2.6 3.1 2 1.3 1.6 1.0 W _C Operating Junction and Storage Temperature Range THERMAL RESISTANCE RATINGS Parameter M i Maximum J Junction-to-Ambient ti t A bi ta Maximum Junction-to-Foot (Case) Notes a. Surface Mounted on 1” x 1” FR4 Board. Document Number: 72173 S-32419—Rev. B, 24-Nov-03 www.vishay.com t v 10 sec Steady State Steady State Symbol RthJA RthJC Typical 32 65 5 Maximum 40 81 6.3 Unit _C/W 1 Si7501DN Vishay Siliconix SPE...