SMA540B

SMA540B Active Biased RF Transistor PRELIMINARY DATA HIGH GAIN LOW NOISE AMPLIFIERS Gms = 19 dB at 1.8 GHz CURRENT EASY ADJUSTABLE BY AN EXTERNAL RESISTOR OPEN COLLECTOR OUTPUT TYPICAL SUPPLY VOLTAGE: 1.4-3.3 V TRANSITION FREQUENCY 42 GHz ULTRA MINIATURE SOT323-4L PACKAGE (LEAD FREE) APPLICATIONS WIDEBAND APPLICATIONS CELLULAR AND CORDLESS TELEPHONES HIGH FREQUENCY OSCILLATORS Bias Bias, 4 C, 3 SOT323-4L (SC70) ORDER CODE SMA540BTR BRANDING TBD DESCRIPTION The SMA540B is a NPN Transistor integrating a current mirror as biasing. In this way the IC (collector current) can be controlled setting the current at Bias pin according to IC = 10 * IBIAS. The IBIAS current is easy adjustable using an external resistor. SMA540B is housed in ultra miniature SOT323-4L package(LEAD FREE), the relative dimensions are 1.15mmx1.8mm with 0.8mm thickness. ABSOLUTE MAXIMUM RATINGS Symbol Vceo Vebo Ic Ib IBIAS Ptot Top Tstg Tj Collector emitter voltage Emitter base voltage Collector current Base current BIAS Current Total dissipation, Ts = 107 Operating temperature Storage temperature Max. operating junction temperature oC B, 1 E, 2 Parameter Value 4.5 1.5 40 4 4 120 -40 to +85 -65 to +150 150 Unit V V mA mA mA mW oC oC o C THERMAL RESISTANCE Rthjs Thermal Resistance Junction soldering point < 270 oC/W January, 15 2003 1/4 SMA540B ELECTRICAL CHARACTERISTICS (TA=25 oC,ZL/S = 50Ω, tested in circuit shown in fig.1, unless otherwise specified ) Symbol Gms (1) 2 Paramete...