Document
SMA5127 N-channel + P-channel 3-phase motor drive
External dimensions B • • • SMA
Absolute maximum ratings
Symbol
N channel
Ratings
P channel
VDSS
60
–60
VGSS
±20
20
ID
4
–4
ID(pulse)
8 (PW≤1ms, Duty≤1%)
–8 (PW≤1ms, Duty≤1%)
4 (Ta=25°C, with all circuits operating, without heatsink) PT
28 (Tc=25°C,with all circuits operating, with infinite heatsink)
θ j-a
31.25 (Junction-Air, Ta=25°C, with all circuits operating)
θ j-c
4.46 (Junction-Case, Tc=25°C, with all circuits operating)
Tch
150
Tstg
–40 to +150
(Ta=25°C)
Unit
V V A A W W °C/W °C/W °C °C
sEquivalent circuit diagram
1
Pch 2
8
9
3
7
10
Nch 4
6
11
142
5
12
Characteristic curves
ID (A)
10V
RDS (ON) (Ω)
ID-VDS Characteristics (Typical)
N-ch
(Ta=25°C)
8
P-ch (Ta=25°C)
–8
4.5V
ID (A)
–10V
6
–6
–4.5V
4.0V
–4.0V
4
–4
3.5V
–3.6V
2
VGS=3.0V
–2
–3.2V
0
0
2
4
6
8
10
VDS (V)
VGS=–2.7V
0
0
–2
–4
–6
–8
–10
VDS (V)
RDS(ON)-ID Characteristics (Typical)
N-ch
P-ch
(Ta=25°C)
(Ta=25°C)
0.6
0.6
0.5 VGS=4V
0.4 10V
0.3
VGS=–4V 0.5
0.4 –10V
0.3
RDS (ON) (Ω)
0.2
0.2
0.1
0.1
0 0 1 2 3 4 5 6 78
ID (A)
0
0
–2
RDS(ON)-TC Characteristics (Typical)
N-ch
ID=2A
VGS=4V
0.8
0.8
0.7
0.7
–4
ID (A)
P-ch
–6
–8
ID=–2A VGS=–10V
RDS (ON) (Ω)
0.6
0.6
0.5
0.5
0.4
0.3
0.2 –40 –25 0
25 50 75 100 125 150
Ta (°C)
0.4
0.3
0.2 –40 –25 0
25 50 75 100 125 150
Ta (°C)
RDS (ON) (Ω)
ID (A)
ID (A)
ID-VGS Characteristics (Typical)
N-ch (VDS=10V)
8
Ta=–40°C
7 25°C
6
125°C
5
4
3
2
1
0
01
2
3
4
5
6
7
VGS (V)
P-ch (VDS=–10V)
–8 Tc=–40°C
–6
25°C
125°C
–4
–2
0
0
–1 –2 –3 –4 –5 –6
–7
VGS (V)
SMA5127
Electrical characteristics
N channel
Symbol
Specification
Unit
min
typ
max
V(BR)DSS
60
V
IGSS
±10
µA
IDSS
100
µA
VTH
1.0
2.0
V
Re(yfs)
2.5
S
RDS(ON)
0.55
Ω
Ciss
150
pF
Coss
70
pF
Crss
15
pF
td (on)
12
ns
tr
40
ns
td (off)
40
ns
tf
25
ns
VSD
1.2
V
trr
75
ns
Conditions
ID=100µA, VGS=0V VGS=±20V
VDS=60V, VGS=0V VDS=10V, ID=250µA
VDS=10V, ID=2A VGS=4V, ID=2A
VDS=10V f=1.0MHz VGS=0V
ID=2A, VDD 20V, RL=10Ω, VGS=5V, see Fig.3 on page 16.
ISD=4A, VGS=0V ISD=2A, VGS=0V,
di/dt=100A/µs
P channel
Specification
Unit
min
typ
max
–60
V
10
µA
–100
µA
–1.0
–2.0
V
3
S
0.55
Ω
320
pF
130
pF
40
pF
20
ns
95
ns
70
ns
60
ns
–1.1
V
75
ns
(Ta=25°C)
Conditions
ID=–100µA, VGS=0V VGS= 20V
VDS=–60V, VGS=0V VDS=–10V, ID=–250µA
VDS=–10V, ID=–2A VGS=–10V, ID=–2A
VDS=–10V, f=1.0MHz,
VGS=0V
ID=–2A, VDD –20V, RL=10Ω, VGS=–5V, see Fig.4 on page 16.
ISD=–4A, VGS=0V ISD=–2A, VGS=0V,
di/dt=100A/µs
Characteristic curves
Re(yfs)-ID Characteristics (Typical)
N-ch
(VDS=10V)
5
5
Tc=–40°C
1
25°C
1
125°C
P-ch
Ta=–40°C
(VDS=–10V)
25°C 125°C
Re (yfs) (S)
Re (yfs) (S)
Capacitance (pF)
0.1 0.01 0.1
NPN
1000
1
8
ID (A)
0.1 –0.05 –0.1
Capacitance-VDS Characteristics (Typical)
N-ch
VGS=0V
(Ta=25°C) f=1MHz
PNP
1000
–1
–8
ID (A)
P-ch
VGS=80V
(Ta=25°C) f=1MHz
Ciss
Capacitance (pF)
Ciss
100
100
Coss
Coss
Crss
10 Crss
5
0
10
20
30
40
50
VDS (V)
10
5
0
–10
–20
–30
–40
–50
VDS (V)
VIDDSR--VVGSSD Characteristics (Typical)
N-ch
P-ch
5
(Ta=25°C)
–5
(Ta=25°C)
4
–4
3
–3
VDS (V)
2
ID=4A 1
2A
0
2
10
20
VGS (V)
–2
–1
0
–2
–10
–20
VGS (V)
VDS (V)
ID (A)
PT (W)
ID (A)
Safe Operating Area (SOA) N-ch
(Tc=25°C)
10 100µs
RDS (on) LIMITED
1ms 10ms
1
0.1
1
10
100
VDS (V)
P-ch
(Tc=25°C)
–10
100µs
RDS (ON) LIMITED
1ms 10ms
–1
–0.1 –1
–10
VDS (V)
–100
PT-Ta Characteristics
30
With Silicon Grease
25
Natural Cooling
All Circuits Operating
20
With Infinite Heatsink
15
10
5 Without Heatsink
0
0
50
100
150
Ta (°C)
143
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