NPN Silicon Transistors for High Voltages
SMBTA 42 SMBTA 43
High breakdown voltage q Low collector-emitter saturation ...
NPN Silicon
Transistors for High Voltages
SMBTA 42 SMBTA 43
High breakdown voltage q Low collector-emitter saturation voltage q Complementary types: SMBTA 92, SMBTA 93 (
PNP)
q
Type SMBTA 42 SMBTA 43
Marking s1D s1E
Ordering Code (tape and reel) Q68000-A6478 Q68000-A6482
Pin Configuration 1 2 3 B E C
Package1) SOT-23
Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Base current Total power dissipation, TS = 74 ˚C Junction temperature Storage temperature range Thermal Resistance Junction - ambient2) Junction - soldering point Rth JA Rth JS
≤ ≤
Symbol VCE0 VCB0 VEB0 IC IB Ptot Tj Tstg
Values SMBTA 42 SMBTA 43 300 300 200 200 6 500 100 360 150 – 65 … + 150
Unit V
mA mW ˚C
280 210
K/W
1) 2)
For detailed information see chapter Package Outlines. Package mounted on epoxy pcb 40 mm × 40 mm × 1.5 mm/6 cm2 Cu.
Semiconductor Group
1
5.91
SMBTA 42 SMBTA 43
Electrical Characteristics at TA = 25 ˚C, unless otherwise specified. Parameter Symbol min. DC characteristics Collector-emitter breakdown voltage IC = 1 mA SMBTA 42 SMBTA 43 Collector-base breakdown voltage IC = 100 µA SMBTA 42 SMBTA 43 Emitter-base breakdown voltage IE = 100 µA Collector-base cutoff current VCB = 200 V VCB = 160 V VCB = 200 V, TA = 150 ˚C VCB = 160 V, TA = 150 ˚C Emitter-base cutoff current VEB = 3 V DC current gain IC = 1 mA, VCE = 10 V IC = 10 mA, VCE = 10 V1) IC = 30 mA, VCE = 10 V1) SMBTA 42 SMBTA 43 SMBTA 42 SMBTA 43 IEB0 hFE 2...
