SMBTA20

NPN Silicon AF Transistor High DC current gain q Low collector-emitter saturation voltage q SMBTA 20 Type SMBTA 20 Marking s1C Ordering Code (tape and reel) Q6800-A6477 Pin Configuration 1 2 3 B E C Package1) SOT-23 Maximum Ratings Parameter Collector-emitter voltage Emitter-base voltage Collector current Peak collector current Peak base current Total power dissipation, TS = 71 ˚C Junction temperature Storage temperature range Thermal Resistance Junction - ambient2) Junction - soldering point Rth JA Rth JS ≤ ≤ Symbol VCE0 VEB0 IC ICM IBM Ptot Tj Tstg Values 40 4 100 200 200 330 150 – 65 … + 150 Unit V mA mW ˚C 310 240 K/W 1) 2) For detailed information see chapter Package Outlines. Package mounted on epoxy pcb 40 mm × 40 mm × 1.5 mm/6 cm2 Cu. Semiconductor Group 1 5.91 SMBTA 20 Electrical Characteristics at TA = 25 ˚C, unless otherwise specified. Parameter Symbol min. DC characteristics Collector-emitter breakdown voltage IC = 1 mA Emitter-base breakdown voltage IE = 100 µA Collector-base cutoff current VCB = 30 V VCB = 30 V, TA = 150 ˚C Emitter-base cutoff current VEB = 4 V DC current gain IC = 5 mA, VCE = 10 V Collector-emitter saturation voltage1) IC = 10 mA, IB = 1 mA AC characteristics Transition frequency IC = 20 mA, VCE = 5 V, f = 100 MHz Output capacitance VCB = 10 V, f = 1 MHz fT Cobo 125 – – – – 4 MHz pF V(BR)CE0 V(BR)EB0 ICB0 – – IEB0 hFE VCEsat – 40 – – – – – – 100 20 20 400 0.25 nA µA nA – V 40 4 – – – – V Values typ. max. Unit 1) Pulse test...