NPN Silicon Darlington Transistors
SMBTA 13 SMBTA 14
High DC current gain q High collector current q Collector-emitter...
NPN Silicon Darlington
Transistors
SMBTA 13 SMBTA 14
High DC current gain q High collector current q Collector-emitter saturation voltage
q
Type SMBTA 13 SMBTA 14
Marking s1M s1N
Ordering Code (tape and reel) Q68000-A6475 Q68000-A6476
Pin Configuration 1 2 3 B E C
Package1) SOT-23
Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Peak collector current Base current Peak base current Total power dissipation, TS = 81 ˚C Junction temperature Storage temperature range Thermal Resistance Junction - ambient2) Junction - soldering point Rth JA Rth JS
≤ ≤
Symbol VCE0 VCB0 VEB0 IC ICM IB IBM Ptot Tj Tstg
Values 30 30 10 300 500 100 200 330 150 – 65 … + 150
Unit V
mA
mW ˚C
280 210
K/W
1) 2)
For detailed information see chapter Package Outlines. Package mounted on epoxy pcb 40 mm × 40 mm × 1.5 mm/6 cm2 Cu.
Semiconductor Group
1
5.91
SMBTA 13 SMBTA 14
Electrical Characteristics at TA = 25 ˚C, unless otherwise specified. Parameter Symbol min. DC characteristics Collector-emitter breakdown voltage IC = 10 µA Collector-base breakdown voltage IC = 10 µA Emitter-base breakdown voltage IE = 10 µA Collector-base cutoff current VCB = 30 V Emitter-base cutoff current VEB = 10 V DC current gain IC = 10 mA, VCE = 5 V1) IC = 100 mA, VCE = 5 V1) SMBTA 13 SMBTA 14 SMBTA 13 SMBTA 14 VCEsat VBEsat V(BR)CE0 V(BR)CB0 V(BR)EB0 ICB0 IEB0 hFE 5000 10000 10000 20000 – – – – – – – – – – – – 1.5 2 V 30 30 10 – – – – – – – – – ...
