SMBT6427

NPN Silicon Darlington Transistor For general amplifier applications q High collector current q High current gain q SMBT 6427 Type SMBT 6427 Marking s1V Ordering Code (tape and reel) Q68000-A8320 Pin Configuration 1 2 3 B E C Package1) SOT-23 Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Peak collector current Total power dissipation, TS = 74 ˚C Junction temperature Storage temperature range Thermal Resistance Junction - ambient2) Junction - soldering point Rth JA Rth JS ≤ ≤ Symbol VCE0 VCB0 VEB0 IC ICM Ptot Tj Tstg Values 40 40 12 500 800 360 150 – 65 … + 150 Unit V mA mW ˚C 280 210 K/W 1) 2) For detailed information see chapter Package Outlines. Package mounted on epoxy pcb 40 mm × 40 mm × 1.5 mm/6 cm2 Cu. Semiconductor Group 1 5.91 SMBT 6427 Electrical Characteristics at TA = 25 ˚C, unless otherwise specified. Parameter Symbol min. DC characteristics Collector-emitter breakdown voltage IC = 10 mA Collector-base breakdown voltage IC = 100 µA Emitter-base breakdown voltage, IE = 10 µA Collector-base cutoff current VCB = 30 V, IE = 0 VCB = 30 V, IE = 0, TA = 150 ˚C Collector cutoff current VCE = 30 V, IB = 0 Emitter-base cutoff current VEB = 10 V, IC = 0 DC current gain IC = 10 mA, VCE = 5 V IC = 100 mA, VCE = 5 V IC = 500 mA, VCE = 5 V Collector-emitter saturation voltage1) IC = 50 mA, IB = 0.5 mA IC = 500 mA, IB = 0.5 mA Base-emitter saturation voltage1) IC = 500 mA, IB = 0.5 mA Base-emi...