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SMBT4126 Dataheets PDF



Part Number SMBT4126
Manufacturers Siemens Semiconductor Group
Logo Siemens Semiconductor Group
Description PNP Silicon Switching Transistor
Datasheet SMBT4126 DatasheetSMBT4126 Datasheet (PDF)

PNP Silicon Switching Transistor High current gain: 0.1 mA to 100 mA q Low collector-emitter saturation voltage q SMBT 4126 Type SMBT 4126 Marking sC3 Ordering Code (tape and reel) Q68000-A8549 Pin Configuration 1 2 3 B E C Package1) SOT-23 Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Total power dissipation, TS = 71 ˚C Junction temperature Storage temperature range Thermal Resistance Junction - ambient2) Junction - sold.

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PNP Silicon Switching Transistor High current gain: 0.1 mA to 100 mA q Low collector-emitter saturation voltage q SMBT 4126 Type SMBT 4126 Marking sC3 Ordering Code (tape and reel) Q68000-A8549 Pin Configuration 1 2 3 B E C Package1) SOT-23 Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Total power dissipation, TS = 71 ˚C Junction temperature Storage temperature range Thermal Resistance Junction - ambient2) Junction - soldering point Rth JA Rth JS ≤ ≤ Symbol VCE0 VCB0 VEB0 IC Ptot Tj Tstg Values 25 25 4 200 330 150 – 65 … + 150 Unit V mA mW ˚C 310 240 K/W 1) 2) For detailed information see chapter Package Outlines. Package mounted on epoxy pcb 40 mm × 40 mm × 1.5 mm/6 cm2 Cu. Semiconductor Group 1 5.91 SMBT 4126 Electrical Characteristics at TA = 25 ˚C, unless otherwise specified. Parameter Symbol min. DC characteristics Collector-emitter breakdown voltage IC = 1 mA Collector-base breakdown voltage IC = 10 µA Emitter-base breakdown voltage IE = 10 µA Collector-base cutoff current VCB = 20 V, IE = 0 Emitter-base cutoff current VEB = 3 V, IC = 0 DC current gain IC = 2 mA, VCE = 1 V IC = 50 mA, VCE = 1 V Collector-emitter saturation voltage1) IC = 50 mA, IB = 5 mA Base-emitter saturation voltage1) IC = 50 mA, IB = 5 mA AC characteristics Transition frequency IC = 10 mA, VCE = 20 V, f = 100 MHz Output capacitance VCB = 5 V, f = 1 MHz Input capacitance VEB = 0.5 V, f = 1 MHz Small-signal current gain IC = 1 mA, VCE = 5 V, f = 1 kHz Noise figure IC = 0.1 mA, VCE = 5 V, f = 10 Hz to 15 kHz RS = 1 kΩ fT Cobo Cibo hfe NF 250 – – 120 – – – – – – – 4.5 10 480 4 – dB MHz pF V(BR)CE0 V(BR)CB0 V(BR)EB0 ICB0 IEB0 hFE 120 60 VCEsat VBEsat – – – – – – 360 – 0.4 0.95 V 25 25 4 – – – – – – – – – – 50 50 – nA V Values typ. max. Unit 1) Pulse test conditions: t ≤ 300 µs, D ≤ 2 %. Semiconductor Group 2 SMBT 4126 Total power dissipation Ptot = f (TA*; TS) * Package mounted on epoxy Saturation voltage IC = f (VBE sat, VCE sat) Permissible pulse load Ptot max / Ptot DC = f (tp) DC current gain hFE = f (IC) VCE = 1 V, normalized Semiconductor Group 3 SMBT 4126 Small-signal current gain hfe = f (IC) VCE = 10 V, f = 1 MHz Semiconductor Group 4 .


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