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PNP Silicon Switching Transistor
High current gain: 0.1 mA to 100 mA q Low collector-emitter saturation voltage
q
SMBT 4126
Type SMBT 4126
Marking sC3
Ordering Code (tape and reel) Q68000-A8549
Pin Configuration 1 2 3 B E C
Package1) SOT-23
Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Total power dissipation, TS = 71 ˚C Junction temperature Storage temperature range Thermal Resistance Junction - ambient2) Junction - soldering point Rth JA Rth JS
≤ ≤
Symbol VCE0 VCB0 VEB0 IC Ptot Tj Tstg
Values 25 25 4 200 330 150 – 65 … + 150
Unit V
mA mW ˚C
310 240
K/W
1) 2)
For detailed information see chapter Package Outlines. Package mounted on epoxy pcb 40 mm × 40 mm × 1.5 mm/6 cm2 Cu.
Semiconductor Group
1
5.91
SMBT 4126
Electrical Characteristics at TA = 25 ˚C, unless otherwise specified. Parameter Symbol min. DC characteristics Collector-emitter breakdown voltage IC = 1 mA Collector-base breakdown voltage IC = 10 µA Emitter-base breakdown voltage IE = 10 µA Collector-base cutoff current VCB = 20 V, IE = 0 Emitter-base cutoff current VEB = 3 V, IC = 0 DC current gain IC = 2 mA, VCE = 1 V IC = 50 mA, VCE = 1 V Collector-emitter saturation voltage1) IC = 50 mA, IB = 5 mA Base-emitter saturation voltage1) IC = 50 mA, IB = 5 mA AC characteristics Transition frequency IC = 10 mA, VCE = 20 V, f = 100 MHz Output capacitance VCB = 5 V, f = 1 MHz Input capacitance VEB = 0.5 V, f = 1 MHz Small-signal current gain IC = 1 mA, VCE = 5 V, f = 1 kHz Noise figure IC = 0.1 mA, VCE = 5 V, f = 10 Hz to 15 kHz RS = 1 kΩ fT Cobo Cibo hfe NF 250 – – 120 – – – – – – – 4.5 10 480 4 – dB MHz pF V(BR)CE0 V(BR)CB0 V(BR)EB0 ICB0 IEB0 hFE 120 60 VCEsat VBEsat – – – – – – 360 – 0.4 0.95 V 25 25 4 – – – – – – – – – – 50 50 – nA V Values typ. max. Unit
1)
Pulse test conditions: t ≤ 300 µs, D ≤ 2 %.
Semiconductor Group
2
SMBT 4126
Total power dissipation Ptot = f (TA*; TS) * Package mounted on epoxy
Saturation voltage IC = f (VBE sat, VCE sat)
Permissible pulse load Ptot max / Ptot DC = f (tp)
DC current gain hFE = f (IC) VCE = 1 V, normalized
Semiconductor Group
3
SMBT 4126
Small-signal current gain hfe = f (IC) VCE = 10 V, f = 1 MHz
Semiconductor Group
4
.