SMBT3904

NPN Silicon Switching Transistor High DC current gain: 0.1 mA to 100 mA q Low collector-emitter saturation voltage q Complementary type: SMBT 3906 (PNP) q SMBT 3904 Type SMBT 3904 Marking s1A Ordering Code (tape and reel) Q68000-A4416 Pin Configuration 1 2 3 B E C Package1) SOT-23 Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Total power dissipation, TS = 69 ˚C Junction temperature Storage temperature range Thermal Resistance Junction - ambient2) Junction - soldering point Rth JA Rth JS ≤ ≤ Symbol VCE0 VCB0 VEB0 IC Ptot Tj Tstg Values 40 60 6 200 330 150 – 65 … + 150 Unit V mA mW ˚C 315 245 K/W 1) 2) For detailed information see chapter Package Outlines. Package mounted on epoxy pcb 40 mm × 40 mm × 1.5 mm/6 cm2 Cu. Semiconductor Group 1 5.91 SMBT 3904 Electrical Characteristics at TA = 25 ˚C, unless otherwise specified. Parameter Symbol min. DC characteristics Collector-emitter breakdown voltage IC = 1 mA Collector-base breakdown voltage IC = 10 µA Emitter-base breakdown voltage IE = 10 µA Collector-base cutoff current VCB = 30 V DC current gain IC = 100 µA, VCE = 1 V IC = 1 mA, VCE = 1 V IC = 10 mA, VCE = 1 V1) IC = 50 mA, VCE = 1 V1) IC = 100 mA, VCE = 1 V1) Collector-emitter saturation voltage1) IC = 10 mA, IB = 1 mA IC = 50 mA, IB = 5 mA Base-emitter saturation voltage1) IC = 10 mA, IB = 1 mA IC = 50 mA, IB = 5 mA V(BR)CE0 V(BR)CB0 V(BR)EB0 ICB0 hFE 40 70 100 60 30 VCEsat – – VBEsat 0....