NPN Silicon Switching Transistors
SMBT 2222 SMBT 2222 A
High DC current gain: 0.1 mA to 500 mA q Low collector-emitter...
NPN Silicon Switching
Transistors
SMBT 2222 SMBT 2222 A
High DC current gain: 0.1 mA to 500 mA q Low collector-emitter saturation voltage q Complementary types: SMBT 2907, SMBT 2907 A (
PNP)
q
Type SMBT 2222 SMBT 2222 A
Marking s1B s1P
Ordering Code (tape and reel) Q68000-A6481 Q68000-A6473
Pin Configuration 1 2 3 B E C
Package1) SOT-23
Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Total power dissipation, TS = 77 ˚C Junction temperature Storage temperature range Thermal Resistance Junction - ambient2) Junction - soldering point Rth JA Rth JS
≤ ≤
Symbol VCE0 VCB0 VEB0 IC Ptot Tj Tstg
Values Unit SMBT 2222 SMBT 2222 A 30 60 5 40 75 6 600 330 150 – 65 … + 150 mA mW ˚C V
290 220
K/W
1) 2)
For detailed information see chapter Package Outlines. Package mounted on epoxy pcb 40 mm × 40 mm × 1.5 mm/6 cm2 Cu.
Semiconductor Group
1
5.91
SMBT 2222 SMBT 2222 A
Electrical Characteristics at TA = 25 ˚C, unless otherwise specified. Parameter Symbol min. DC characteristics Collector-emitter breakdown voltage IC = 10 mA SMBT 2222 SMBT 2222 A Collector-base breakdown voltage IC = 10 µA SMBT 2222 SMBT 2222 A Emitter-base breakdown voltage IE = 10 µA SMBT 2222 SMBT 2222 A Collector cutoff current VCB = 50 V VCB = 60 V VCB = 50 V, TA = 150 ˚C VCB = 60 V, TA = 150 ˚C Emitter cutoff current VEB = 3 V DC current gain IC = 100 µA, VCE = 10 V IC = 1 mA, VCE = 10 V IC = 10 mA, VCE = 10 V1) IC = 150 mA, VCE = 1 V1) IC ...
