K9K1208U0A-YCB0

K9K1208U0A-YCB0, K9K1208U0A-YIB0 Document Title 64M x 8 Bit NAND Flash Memory Revision History Revision No 0.0 FLASH MEMORY History 1. Initial issue - Changed /SE(pin # 6, Spare Area Enable) pin to N.C ( No Connection). So, /SE pin is don’ t-cared regardless of external logic input level and is fixed as low internally. Draft Date Dec. 6th 2000 Remark Preliminary 0.1 1. Changed plane address in Copy-Back Program Dec. 28th 2000 - A14, the plane address, of source and destination page address must be the same. => A14 and A25, the plane address, of source and destination page address must be the same. 1. In addition, explain WE function in pin description - The WE must be held high when outputs are activated. Jan. 17th 2001 Final 0.2 Note : For more detailed features and specifications including FAQ, please refer to Samsung’ s Flash web site. http://www.intl.samsungsemi.com/Memory/Flash/datasheets.html The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions about device. If you have any questions, please contact the SAMSUNG branch office near your office. 1 K9K1208U0A-YCB0, K9K1208U0A-YIB0 FLASH MEMORY 64M x 8 Bit NAND Flash Memory FEATURES Voltage Supply : 2.7V~3.6V Organization - Memory Cell Array : (64M + 2,048K)bit x 8bit - Data Register : (512 + 16)bit x8bit Automatic Program and Erase - ...