1M x 8 bit NAND Flash Memory
K9F8008W0M-TCB0, K9F8008W0M-TIB0
Document Title
1M x 8 bit NAND Flash Memory
FLASH MEMORY
Revision History
Revision No...
Description
K9F8008W0M-TCB0, K9F8008W0M-TIB0
Document Title
1M x 8 bit NAND Flash Memory
FLASH MEMORY
Revision History
Revision No.
0.0 1.0
History
Data Sheet 1997 Data Sheet 1998 1. Changed tBERS parameter : 5ms(Typ.) → 2ms(Typ.) 10ms(Max.) → 4ms(Max.) 2. Changed tPROG parameter : 1.5ms(Max.) → 1.0ms(Max.) Data sheet 1998 1. Cjanged DC and Operating Characteristics
Parameter Burst Read Operating Current Program Eraase Stand-by Current (CMOS) Input Leakage Current Output Leakage Current Vcc=2.7V~3.6V Typ 10 → 5 10 → 5 10 → 5 5 → 10 Max 20 → 10 20 → 10 20 → 10 50 10 → ±10 10 → ±10 Vcc=3.6V~5.5V Typ 15 → 10 15 → 10 15 → 10 10 Max 30 → 20 30 → 20 30 → 20 100 → 50 10 → ±10 10 → ±10 µA mA Unit
Draft Date
April 10th 1997 April 10th 1998
Remark
Advance Preliminary
1.1
July 14th 1998
Final
1.2
Data Sheet 1999 t care mode during the data-loading and reading 1) Added CE don’ 1) Revised real-time map-out algorithm(refer to technical notes) Changed device name - KM29W8000T -> K9F8008W0M-TCB0 - KM29W8000IT -> K9F8008W0M-TIB0
April 10th 1999
Final
1.3 1.4
July 23th 1999 Sep. 15th 1999
Final Final
The attached datasheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions about device. If you have any questions, please contact the SAMSUNG branch office near you.
1
K9F8008W0M-TCB0, K9F8008W0M-TIB0
1M x 8 Bit NAND Flash Memory
FEATURES
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